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| PD - 91625 IRF7379 HEXFET(R) Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N EL M O S FET 1 8 D1 D1 D2 D2 N-Ch VDSS 30V P-Ch -30V 2 7 3 6 4 5 P -C H AN N E L MO S FET RDS(on) 0.045 0.090 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. T o p V ie w S O -8 Absolute Maximum Ratings Parameter VSD ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG Drain-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. N-Channel 30 5.8 4.6 46 2.5 0.02 20 5.0 -55 to + 150 -5.0 P-Channel -30 -4.3 -3.4 -34 Units A W W/C V V/ns C Thermal Resistance Ratings Parameter RJA Maximum Junction-to-Ambient Max. 50 Units C/W www.irf.com 1 12/8/98 IRF7379 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage Min. Typ. Max. N-Ch 30 -- -- P-Ch -30 -- -- N-Ch -- 0.032 -- P-Ch -- -0.037 -- -- 0.038 0.045 N-Ch -- 0.055 0.075 -- 0.070 0.090 P-Ch -- 0.130 0.180 N-Ch 1.0 -- -- P-Ch -1.0 -- -- N-Ch 5.2 -- -- P-Ch 2.5 -- -- N-Ch -- -- 1.0 P-Ch -- -- -1.0 N-Ch -- -- 25 P-Ch -- -- -25 N-P -- -- 100 N-Ch -- -- 25 P-Ch -- -- 25 N-Ch -- -- 2.9 P-Ch -- -- 2.9 N-Ch -- -- 7.9 P-Ch -- -- 9.0 N-Ch -- 6.8 -- P-Ch -- 11 -- N-Ch -- 21 -- P-Ch -- 17 -- N-Ch -- 22 -- P-Ch -- 25 -- N-Ch -- 7.7 -- P-Ch -- 18 -- N-P -- 4.0 -- N-P -- 6.0 -- N-Ch -- 520 -- P-Ch -- 440 -- N-Ch -- 180 -- P-Ch -- 200 -- N-Ch -- 72 -- P-Ch -- 93 -- Units V V/C Conditions VGS = 0V, ID = 250A VGS = 0V, ID = -250A Reference to 25C, ID = 1mA Reference to 25C, ID = -1mA VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 4.9A VGS = -10V, ID =- 4.3A VGS = -4.5V, ID =- 3.7A VDS = VGS, ID = 250A VDS = VGS, ID = -250A VDS = 15V, ID = 2.4A VDS = -24V, ID = -1.8A VDS = 24 V, VGS = 0V VDS = -24V, VGS = 0V VDS = 24 V, VGS = 0V, TJ = 125C VDS = -24V, VGS = 0V, TJ = 125C VGS = 20V N-Channel ID = 2.4A, VDS = 24V, VGS = 10V nC P-Channel ID = -1.8A, VDS = -24V, VGS = -10V N-Channel VDD = 15V, ID = 2.4A, RG = 6.0, RD = 6.2 ns P-Channel VDD = -15V, ID = -1.8A, RG = 6.0, RD = 8.2 nH Between lead, 6mm (0.25in.) from package and center of die contact N-Channel VGS = 0V, VDS = 25V, = 1.0MHz pF P-Channel VGS = 0V, VDS = -25V, = 1.0MHz V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance V S I DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductace Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance A Source-Drain Ratings and Characteristics Parameter IS I SM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions -- -- 3.1 -- -- -3.1 A -- -- 46 -- -- -34 -- -- 1.0 TJ = 25C, IS = 1.8A, VGS = 0V V -- -- -1.0 TJ = 25C, IS = -1.8A, VGS = 0V -- 47 71 N-Channel ns -- 53 80 TJ = 25C, IF = 2.4A, di/dt = 100A/s -- 56 84 P-Channel nC TJ = 25C, IF = -1.8A, di/dt = -100A/s -- 66 99 Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 10 ) Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. N-Channel ISD 2.4A, di/dt 73A/s, VDD V(BR)DSS, TJ 150C P-Channel ISD -1.8A, di/dt 90A/s, VDD V(BR)DSS, TJ 150C 2 www.irf.com N-Channel IRF7379 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 I , D rain-to-S ourc e C urrent (A ) D 100 I , D rain -to-S ourc e C urren t (A ) D VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 100 4.5V 10 4 .5V 10 1 0.1 1 20 s P U LS E W ID T H TJ = 25C 10 A 100 1 0.1 1 20 s P U L S E W ID TH T J = 150C 10 100 A VD S , D rain-to-S ourc e Voltage (V) V D S , D ra in-to-S ource V olta ge (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 I D , D rain -to -S o u rce C u rrent (A ) TJ = 2 5 C TJ = 1 5 0 C I S D , R everse D rain C urre nt (A ) 10 TJ = 150 C TJ = 25 C 1 10 4 5 6 7 VDS = 15V 2 0 s P U L S E W ID T H 8 9 10 A 0.1 0.0 0.5 1.0 1.5 V G S = 0V 2.0 A 2.5 V G S , G a te -to -S o u rce V olta ge (V ) V S D , S ource-to-D rain V oltage (V ) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage www.irf.com 3 IRF7379 2.0 N-Channel R D S(o n ) , D rain-to-S ourc e O n R esis tanc e (N orm alized) I D = 4.0A R DS (on) , Drain-to-Source On Resistance ( ) 0.20 0.16 1.5 0.12 1.0 VGS = 4.5V 0.08 0.5 VGS = 10V 0.04 0.0 -60 -40 -20 0 20 40 60 80 V G S = 10V 100 120 140 160 A 0.00 2 4 6 8 10 T J , Junction Tem perature (C ) I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current R DS (on) , Drain-to-Source On Resistance ( ) 0.08 0.07 0.06 0.05 ID = 5.8A 0.04 0.03 0 4 8 12 16 VGS , Gate-to-Source Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage 4 www.irf.com N-Channel 1000 IRF7379 I D = 2.4A V D S = 24V 800 V G S , G ate-to-S ou rce V olta ge (V ) V GS C iss C rss C oss = = = = 0V , f = 1M H z C gs + C gd , C ds S H O R T E D C gd C ds + C g d 20 16 C , C apac itanc e (pF ) C is s 600 12 C oss 400 8 200 C rs s 4 0 1 10 100 A 0 0 5 10 FO R TE S T C IR C U IT S E E FIG U R E 11 15 20 25 A V D S , D rain-to -S ource V oltage (V ) Q G , Total G ate C harge (nC ) Fig 8. Typical Capacitance Vs. Drain-to-Source Voltage Fig 9. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) D = 0.50 10 0.20 0.10 0.05 0.02 0.01 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.01 0.1 1 10 100 1 0.1 0.00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7379 100 TOP VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V P-Channel 100 -ID , D rain-to-S ource C urrent (A ) 10 -4 .5 V -I D , D rain-to-S ourc e C urrent (A ) VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP 10 -4 .5V 1 0.1 1 2 0 s P U LS E W ID TH TJ = 2 5C A 10 100 1 0.1 1 20 s P U LS E W ID TH T J = 1 50 C 10 100 A -VD S , D rain-to-S ourc e V oltage (V ) -V D S , D rain-to-S ource V oltage (V) Fig 11. Typical Output Characteristics Fig 12. Typical Output Characteristics 100 100 -I D , D ra in -to-S ou rc e C u rren t (A ) TJ = 2 5 C T J = 1 5 0 C -I S D , R e vers e D ra in C u rre nt (A ) 10 TJ = 15 0 C TJ = 2 5 C 1 10 1 4 5 6 7 V D S = -1 5 V 2 0 s P U L S E W ID T H 8 9 10 A 0.1 0.0 0.3 0.6 0.9 VG S = 0 V 1.2 A 1.5 -V G S , G a te -to -S o u rc e V o lta g e (V ) -VS D , S o u rc e -to-D rain V o ltag e (V ) Fig 13. Typical Transfer Characteristics Fig 14. Typical Source-Drain Diode Forward Voltage 6 www.irf.com P-Channel IRF7379 0.50 2.0 R D S (on) , D rain-to-S ource O n R esistance (N orm alize d) I D = -3.0 A R DS (on) , Drain-to-Source On Resistance ( ) 0.40 1.5 0.30 1.0 VGS = -4.5V 0.20 0.5 VGS = -10V 0.10 0.0 -60 -40 -20 0 20 40 60 80 VG S = -1 0V 100 120 140 160 A 0.00 0 2 4 6 8 10 12 14 T J , Ju nction T em p erature (C ) -I D , Drain Current (A) Fig 15. Normalized On-Resistance Vs. Temperature Fig 16. Typical On-Resistance Vs. Drain Current R DS (on), Drain-to-Source On Resistance ( ) 0.16 0.14 0.12 0.10 ID = -4.3A 0.08 0.06 0 4 8 12 16 -VGS , Gate-to-Source Voltage (V) Fig 17. Typical On-Resistance Vs. Gate Voltage www.irf.com 7 IRF7379 1000 P-Channel 800 -V G S , G ate-to-S ource V oltage (V ) V GS = C iss = C rs s = C oss = 0V , f = 1M H z C g s + C gd , C ds S H O R TE D C gd C ds + C g d 20 I D = -3.0A V D S = -24V 16 C , C apacitance (pF) 600 C iss C oss 12 400 8 200 C rss 4 0 1 10 100 A 0 0 5 10 FO R TE S T C IR C U IT S E E FIG U R E 22 15 20 25 A - -V DS , D ra in -to -S ou rce V oltage (V ) Q G , Total G ate C harge (nC ) Fig 18. Typical Capacitance Vs. Drain-to-Source Voltage Fig 19. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) D = 0.50 10 0.20 0.10 0.05 0.02 0.01 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.01 0.1 1 10 100 1 0.1 0.00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 8 www.irf.com IRF7379 Package Outline SO8 Outline D -B- DIM 5 INCHES MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .196 .157 MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99 A 6 5 H 0.25 (.010) M AM 5 8 E -A- 7 A1 B C D E 1 2 3 4 e 6X K x 45 e1 A e e1 H K L .050 BASIC .025 BASIC .2284 .011 0.16 0 .2440 .019 .050 8 1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 0 6.20 0.48 1.27 8 0.10 (.004) 6 C 8X -CB 8X 0.25 (.010) NOTES: A1 M CASBS L 8X RECOMMENDED FOOTPRINT 0.72 (.028 ) 8X 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X 6.46 ( .255 ) 1.78 (.070) 8X Part Marking Information SO8 E X A M P L E : T H IS IS A N IR F 7 1 0 1 D A T E C O D E (Y W W ) Y = L A S T D IG IT O F T H E Y E A R W W = W EEK XX X X W AFER LO T CODE (L A S T 4 D IG IT S ) 312 IN T E R N A T IO N A L R E C T IF IE R LOGO F7101 TOP PART NUMBER BO TTO M www.irf.com 9 IRF7379 Tape & Reel Information SO8 Dimensions are shown in millimeters (inches) TE R M IN AL N U M B ER 1 12 .3 ( .48 4 ) 11 .7 ( .46 1 ) 8.1 ( .318 ) 7.9 ( .312 ) F EE D D IR EC T IO N N O TE S : 1 . C O N TR O L L IN G D IM E N S IO N : M IL L IM E TE R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E TE R S (IN C H E S ). 3 . O U TL IN E C O N FO R M S TO E IA -4 8 1 & E IA -54 1 . 330.00 (12.992) M A X. 14.40 ( .566 ) 12.40 ( .488 ) N O T ES : 1. C O N T RO LL IN G D IM E N SIO N : M ILLIM ET ER . 2. O U T LIN E C O N F O R M S T O EIA-48 1 & E IA-541. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 12/98 10 www.irf.com |
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